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| Dual Power MOSFET Module Common-Source connected N-Channel Enhancement Mode VMK 90-02T2 VDSS = 200 V = 83 A ID25 RDS(on) = 25 mW 45 1 2 3 67 Symbol VDSS VDGR VGS VGSM ID25 ID80 IDM PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 6.8 kW Continuous Transient TC = 25C TC = 80C TC = 25C, tp = 10 ms, pulse width limited by TJM TC = 25C, TJ = 150C, Maximum Ratings 200 200 20 30 83 62 330 380 -40 ... +150 150 -40 ... +125 V V V V A A A W C C C V~ V~ TO-240 AA E 72873 1 2 3 6 7 4 5 1, 3 = Drain, 5, 6 = Gate, 2 = Common Source 4, 7 = Kelvin Source Features q q 50/60 Hz IISOL 1 mA t = 1 min t=1s 2500 3000 q Mounting torque(M5 or 10-32 UNF) Terminal connection torque (M5) Typical including screws 2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. 90 g q q q q q Two MOSFET with common source International standard package JEDEC TO-240 AA Direct copper bonded Al2O3 ceramic base plate Isolation voltage 3000 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Kelvin source contact Keyed twin plugs Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200 2 4 V Applications q q VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 3 mA VGS = 20 V DC, VDS = 0 VDS = 0.8 * VDSS, VGS = 0 V, TJ = 25C VGS = 0 V, TJ = 125C VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 % q V q Push-pull inverters Switched-mode and resonant-mode power supplies Uninterruptible power supplies (UPS) AC static switches 500 nA 400 mA 2 mA 25 mW Advantages q q q q Easy to mount with two screws Space and weight savings High power density Low losses Data per MOSFET unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved 1-4 750 VMK 90-02T2 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 60 9000 15000 VGS = 0 V, VDS = 25 V, f = 1 MHz 1600 600 4500 1500 70 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), resistive load 80 200 100 380 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 70 190 S pF pF pF ns ns ns ns Dimensions in mm (1 mm = 0.0394") TO-240 AA Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd RthJC RthJK dS dA a VDS = 10 V; ID = 0.5 * ID25 pulsed 450 nC 110 nC 230 nC 0.33 K/W with heat transfer paste Creepage distance on surface Strike distance through air Max. allowable acceleration 12.7 9.6 50 0.53 K/W mm mm m/s2 Source-Drain Diode Symbol IS ISM VSD trr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 83 330 1.0 1.2 A A V Repetitive; pulse width limited by TJM IF = IS; VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS, -di/dt = 100 A/ms, VDS = 100 V, VGS = 0 V 400 750 ns IXYS MOSFETs and All rights reserved (c) 2000 IXYS IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 VMK 90-02T2 ID 200 A 200 VGS = 10 V 9V 8V 7V A VDS = 30 V TJ = 25C 175 150 125 100 175 ID 150 125 100 6V 75 50 25 0 0 1 2 3 4 V 5 V 5V 75 50 25 0 6 0 1 2 3 4 5 6 VGS 7V 8 TJ = 125C DS Fig. 1 Typical output characteristics ID = f (VDS) 1.4 R 1.3 2.50 R 2.25 norm. 2.00 V GS Fig. 2 Typical transfer characteristics ID = f (VGS) normalized to RDS(on) @0.5 ID25, VGS = 10V DS(on) ID = 45 A DS(on) norm. 1.2 = 10 V 1.75 1.50 1.25 1.1 1.0 V GS = 15 V 1.00 0.75 0.9 0.8 0 25 50 75 100 ID 125 A 150 0.50 -50 -25 0 25 50 75 TJ 100 125 C 150 Fig. 3 Typical normalized RDS(on) = f (ID) 100 A Fig. 4 Typical normalized RDS(on) = f (TJ) 1.2 VGS(th) VDSS 1.1 norm. 1.0 0.9 0.8 0.7 -50 VDSS VGS(th) ID 80 60 40 20 0 0 25 50 75 100 125 C 150 TC -25 0 25 50 75 100 C 125 TJ 150 Fig. 5 Continuous drain current ID = f (TC) Fig. 6 Typical normalized VDSS = f (TJ), VGS(th) = f (TJ) (c) 2000 IXYS All rights reserved 3-4 VMK 90-02T2 10 V 1000 VDS = 100 V ID = 40 A IG = 2 mA A VGS 8 6 4 ID 100 Limited by RDS(on) t = 1 ms t = 10 ms 10 2 0 0 100 200 300 nC TK = 25C TJ = 150C non-repetitive t = 100 ms 1 400 1 Qg 10 100 VDS V 1000 Fig. 7 Typical turn-on gate charge characteristics 100 nF 10 C Coss Ciss Fig. 8 Forward Safe Operating Area, ID = f (VDS) 200 A 150 IS 100 TJ = 125C TJ = 25C 1 Crss 50 0.1 0 5 10 15 20 V 25 VDS 0 0 0.00 0.25 0.50 0.75 1.00 1.25 V 1.50 VSD Fig. 9 Typical capacitances C = f (VDS), f = 1 MHz 100 s g 80 fs Fig. 10 Typical forward characteristics of reverse diode, IS = f (VSD) 1 K/W D = 0.5 D = 0.2 0.1 60 40 0.01 D = single pulse ZthJK D = 0.1 D=0.05 D=0.02 20 0 0 20 40 60 80 100 A 120 ID 0.001 0.001 0.01 0.1 1 t s 10 Fig. 11 Typical transconductance gfs = f (ID) Fig. 12 Transient thermal resistance ZthJK = f (tp) (c) 2000 IXYS All rights reserved 4-4 |
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